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UNISONIC TECHNOLOGIES CO., LTD 2N3904
NPN GENERAL PURPOSE AMPLIFIER
FEATURES
* Collector-Emitter Voltage: VCEO=40V www..com * Collector Dissipation: PC(MAX)=625mW * Complementary to 2N3906
NPN SILICON TRANSISTOR
1
TO-92
*Pb-free plating product number: 2N3904L
ORDERING INFORMATION
Order Number Normal Lead Free Plating 2N3904-T92-B 2N3904L-T92-B 2N3904-T92-K 2N3904L-T92-K Package TO-92 TO-92 Pin Assignment 1 2 3 E B C E B C Packing Tape Box Bulk
2N3904L-T92-B (1)Packing Type (2)Package Type (3)Lead Plating (1) B: Tape Box, K: Bulk (2) T92: TO-92 (3) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., Ltd
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ABSOLUTE MAXIMUM RATING (Ta=25 )
NPN SILICON TRANSISTOR
PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 200 mA Collector Dissipation PC 625 mW Junction Temperature TJ 150 Operating and Storage Temperature TSTG -55 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. www..com Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25 , unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO IC=10A, IE=0 Collector-Emitter Breakdown Voltage (note) BVCEO IC=1mA,IB=0 Emitter-Base Breakdown Voltage BVEBO IE=10A, IC=0 VCE(SAT)1 IC=10mA, IB=1mA Collector-Emitter Saturation Voltage (note) VCE(SAT)2 IC=50mA, IB=5mA VBE(SAT)1 IC=10mA, IB=1mA Base-Emitter Saturation Voltage (note) VBE(SAT)2 IC=50mA, IB=5mA Collector Cut-off Current ICBO VCE=30V, VEB=3V Base Cut-off Current IBL VCE=30V, VEB=3V hFE1 VCE=1V, IC=0.1mA hFE2 VCE=1V, IC=1mA hFE3 VCE=1V, IC=10mA DC Current Gain (note) hFE4 Current Gain Bandwidth Product Output Capacitance Turn on Time hFE5 fT Cob tON VCE=1V, IC=50mA VCE=1V, IC=100mA VCE=20V, IC=10mA, f=100MHz VCB=5V, IE=0, f=1MHz VCC=3V,VBE=0.5V,IC=10mA, IB1=1mA IB1=1B2=1mA MIN 60 40 6 TYP MAX UNIT V V V 0.2 V 0.3 0.85 V 0.95 50 nA 50 nA
0.65
40 70 100 60 30 300
300
4 70 250
MHz pF ns ns
Turn off Time tOFF Note: Pulse test: Pulse Width 300s, Duty Cycle 2%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
hFE vs. IC 240
DC Current Gain, hFE
NPN SILICON TRANSISTOR
Current Gain-Bandwidth Product, fT (MHz)
fT vs. IC 1000 500 300 VCE=20V
200 160 120 80 40
VCE=1V
www..com
100 50 30
0 0.1 0.3 0.5 1
3 5 10
30 50100
10 0.1 0.3 0.5 1
3 5 10
30 50100
Collector Current, I C (mA)
Collector Current, IC (mA)
V(SAT) vs. IC
Cob vs. VCB 6 IE =0 f=1MHz
Saturation Voltage, VBE(SAT), VCE(SAT)
10
Capacitance, Cob (pF)
5 3 1 0.5 0.3
I C=10IB VBE(SAT)
5 4 3 2 1 0 1 3 5 10 30 50 100 Collector-Base Voltage, VCB (V)
0.1 0.05 0.03
VCE(SAT)
0.01 0.1 0.3 0.5 1 3 5 10 30 50100 Collector Current, IC (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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